Book Chapters and Feature Articles:

J.H. Weaver and C.M. Aldao, "Spontaneous Etching of Si with Br, Cl, and I," in Morphological Organizations during Epitaxial Growth and Removal, edited by Z.Y. Zhang and M.G. Lagally (World Scientific Series on Directions of Condensed Matter Physics, 1999), 453-484.

B.Y. Han and J.H. Weaver, "Spontaneous and Laser-enhanced Halogen Etching of GaAs," Journal of Physics: Condensed Matter 10, 7723-7742 (1998).

J.J. Boland and J.H. Weaver, "A Surface View of Etching," Physics Today 51, 34-40 (1998).

Refereed Publications:

C.M. Aldao, D.J.W. Aastuen, M. Vos, I.M. Vitomirov, G.D. Waddill, P.J. Benning, and J.H. Weaver, "Interface Formation with Ions and Neutral Atoms," Phys. Rev. B 42, 2878-2885 (1990).

C. Gu, Y. Chen, T.R. Ohno, and J.H. Weaver, "Br2 Adsorption on GaAs(110) and Surface Etching at Low Temperature," Phys. Rev. B 46, 10197-10200 (1992).

M. Chander, Y.Z. Li, and J.H. Weaver, "Patterning of Si(100): Spontaneous Etching with Br2," Phys. Rev. Lett. 71, 4154-4157 (1993).

M. Chander, Y.Z. Li, J.C. Patrin, and J.H. Weaver, "Layer-by-Layer Etching of Si(100)-2x1 with Br2: An STM Study," Phys. Rev. B Rapid Commun. 47, 13035-13038 (1993).

J.C. Patrin and J.H. Weaver, "Br2 and Cl2 Adsorption and Etching of GaAs(110) Studied by Scanning Tunneling Microscopy," Phys. Rev. B 48, 17913-17921 (1993).

J.C. Patrin, Y.Z. Li, M. Chander, and J.H. Weaver, "Atomic Layer Etching of GaAs(110) with Br2 Studied by STM," Appl. Phys. Lett. 62, 1277-1279 (1993).

D. Rioux, M. Chander, Y.Z. Li, and J.H. Weaver, "Bromine Interaction with Si(100)-2x1: Chemisorption and the Initial Stages of Etching," Phys. Rev. B 49, 11071-11079 (1994).

D. Rioux, R.J. Pechman, M. Chander, and J.H. Weaver, "Temperature Dependent Surface Morphologies for Br-etched Si(100)-2x1," Phys. Rev. B 50, 4430-4438 (1994).

F. Stepniak, D. Rioux, and J.H. Weaver, "Prelude to Etching: Surface Interaction of Chlorine on GaAs(110)," Phys. Rev B 50, 1929-1934 (1994).

X.-S. Wang, R.J. Pechman, and J.H. Weaver, "Interaction of 300-5000 eV Ions with GaAs(110)," Appl. Phys. Lett. 65, 2818-2820 (1994).

F. Stepniak and J.H. Weaver, "Effect of Cl Incorporation during the Oxidation of Si," J. Vac. Sci. Technol. B 12, 3031-3035 (1994).

M. Chander, D.A. Goetsch, C.M. Aldao, and J.H. Weaver, "Determination of Dynamic Parameters Controlling Atomic Scale Etching of Si(100)-2x1 by Chlorine," Phys. Rev. Lett. 74, 2014-2017 (1995).

R.J. Pechman, X.-S. Wang, and J.H. Weaver, "Vacancy Kinetics on GaAs(110)," Phys. Rev. B 51, 10929-10936 (1995).

D. Rioux, F. Stepniak, R.J. Pechman, and J.H. Weaver, "Chemisorption and Thermally-activated Etching of Si(100)-2x1 by Iodine," Phys. Rev. B 51, 10981-10988 (1995).

M. Chander, D.A. Goetsch, C.M. Aldao, and J.H. Weaver, "Etching of Si(100)-2x1 with Chlorine: Reaction Pathways, Energy Anisotropies, and Atomic Scale Phenomena," Phys. Rev. B 52, 8288-8294 (1995).

X.-S. Wang, R.J. Pechman, and J.H. Weaver, "Ion Sputtering of GaAs(110): From Individual Bombardment Events to Multilayer Removal," J. Vac. Sci. Technol. B 13, 2031-2040 (1995).

R.J. Pechman, X.-S. Wang, and J.H. Weaver, "Interactions of Br with Si(111)-7x7: Chemisorption, Step Retreat, and Terrace Etching," Phys. Rev. B 52, 11412-11423 (1995).

J.R. Sánchez, C.M. Aldao, and J.H. Weaver, "Analysis and Monte Carlo Simulations of Spontaneous Etching: Cl-Si(100)-2x1," J. Vac. Sci. Technol. B 13, 2230-2233 (1995).

R.J. Pechman, T. Moriwaki, J.H. Weaver, and G.S. Khoo, "Formation of Br-terminated Si6 Rings during Etching of Si(111)7x7," Surf. Sci. Lett. 341, L1085-1090 (1995).

X.-S. Wang, J. Brake, R.J. Pechman, and J.H. Weaver, "Effect of Ion Sputtering on Ge Epitaxy on GaAs(110)," Appl. Phys. Lett. 68, 1660-1662 (1996).

J. Brake, X.-S. Wang, R.J. Pechman, and J.H. Weaver, "Enhanced Epitaxial Growth on Substrates Modified by Ion Sputtering: Ge on GaAs(110)," Phys. Rev. B 53, 11170-11175 (1996).

Y. Gong, D.W. Owens, and J.H. Weaver, "Etching of Double-height-stepped Si(100)-2x1: A Study of Steps and Their Interactions," Phys. Rev. B Rapid Communications 53, R16144-R16147 (1996).

F.J. Williams, C.M. Aldao, and J.H. Weaver, "Surface Morphologies for Br-etched Si(100)-2x1: Kinetics of Pit Growth and Step Retreat," J. Vac. Sci. Technol. B 14, 2519-2523 (1996).

X.-S. Wang, R.J. Pechman, and J.H. Weaver, "Trends in Surface Roughening: Analysis of Ion-sputtered GaAs(110)," Surf. Sci. 364, 511-518 (1996).

C.Y. Cha and J.H. Weaver, "Layer-by-Layer Removal of GaAs(110) by Bromine," J. Vac. Sci. Technol. B 14, 3559-3562 (1996).

C.M. Aldao and J.H. Weaver, "Scanning Tunneling Microscopy Observations and Analysis of Thermal Etching of Si(100) with Br and Cl," Japanese J. Appl. Phys. 36, 2456-2459 (1997).

C.Y. Cha, J. Brake, B.Y. Han, D.W. Owens, and J.H. Weaver, "Surface Morphologies Associated with Thermal Deposition: Scanning Tunneling Microscopy Studies of Br-GaAs(110)," J. Vac. Sci. Technol. B 15, 605-609 (1997).

J. Brake, C.Y. Cha, B.Y. Han, D.W. Owens, and J.H. Weaver, "Coverage-dependent Etching Pathways for Br-GaAs(110)," J. Vac. Sci. Technol. B 15, 670-674 (1997).

F.J. Williams, C.M. Aldao, Y. Gong, and J.H. Weaver, "Why Si(100) Steps are Rougher after Etching," Phys. Rev. B B 55, 13829-13834 (1997).

C.Y. Cha, B.Y.Han, and J.H. Weaver, "Pulsed-laser-induced Etching of Br-GaAs(110) using 2.3 eV Photons," Surf. Sci. Lett. 381, L636-L643 (1997).

B.Y. Han, C.Y. Cha, and J.H. Weaver, "Etch Pit Development and Growth on GaAs(110)," Phys. Rev. B 56, 4966-4970 (1997).

Lin Huang, S. Jay Chey, and J.H. Weaver, "Buffer-Layer-Assisted Growth of Nanocrystals: Ag-Xe-Si(111)," Phys. Rev. Lett. 80, 4095-4098 (1998).

B.Y. Han, C.Y. Cha, and J.H. Weaver, "Terrace patterning of GaAs(110) with Halogenation and Pulsed-laser Irradiation," J. Vac. Sci. Technol. A 16, 490-493 (1998).

S. J. Chey, Lin Huang, and J.H. Weaver, "Manipulation and Writing with Ag Nanocrystals on Si(111)-7x7," Appl. Phys. Lett. 21, 2698-2700 (1998).

S.J. Chey, Y. Gong, and J.H. Weaver, "Surface Morphologies of Br-etched Ge/Si(001)," Surf. Sci. 409, 421-427 (1998).

J.L. Iguain, H.O. Martin, C.M. Aldao, Y. Gong, S.J. Chey, and J.H. Weaver, "Dimer Chain Patterns during Submonolayer Growth of Silicon on Si(100)," J. Vac. Sci. Technol. A 16, 3460-3463 (1998).

L. Huang, S.J. Chey, and J.H. Weaver, "Metastable Structures and Critical Thicknesses: Ag on Si(111)-7x7," Surf. Sci. Lett. 416, L1101-L1106 (1998).

B.Y. Han and J.H. Weaver, "Laser Interaction with Br-GaAs(110): Etching and Atomic Desorption," Phys. Rev. B 58, 10981-10990 (1998).

K. Nakayama and J.H. Weaver, "Vacancy-assisted Halogen Etching Si(100)-2x1," Phys. Rev. Lett. 82, 568-571 (1999).

S. Jay Chey, L. Huang, and J.H. Weaver, "Interface Bonding and Manipulation of Ag and Cu Nanocrystals on Si(111)-(7x7)-based Surfaces" Phys. Rev. B 59, 16033-16041 (1999).

S.J. Chey, L. Huang, and J.H. Weaver, "Self-Assembly of Multilayer Arrays from Ag Nanoclusters Delivered to Ag(111) by Soft Landing," Surf. Sci. Lett. 419, L100-L106 (1999).

K. Nakayama and J.H. Weaver, "Electron-Stimulated Modification of Si Surfaces," Phys. Rev. Lett. 82, 980-983 (1999).

K. Nakayama, C.M. Aldao, and J.H. Weaver, "Halogen Etching of Si(100)-2x1: Dependence on Surface Concentration and Vacancy Creation," Phys. Rev. B 59, 15893-15901 (1999).

K. Nakayama and J.H. Weaver, "Si(100)-2x1 Etching with Fluorine: Planar Removal vs. Three Dimensional Pitting," Phys. Rev. Lett. 83, 3210-3213 (1999).

K.S. Nakayama, B.Y. Han, and J.H. Weaver, "Electron- and Photon-stimulated Modification of Semiconductor Surfaces," Butsuri (The Physical Society of Japan) 55, 281-285 (2000). In Japanese.

C.M. Aldao and J.H. Weaver, "Halogen Etching of Si via Atomic-scale Processes," review article, Progress in Surface Science 68, 189-230 (2001).

K.S. Nakayama, E. Graugnard, and J.H. Weaver, "Surface Modification without Desorption: Recycling of Cl on Si(100)-2x1," Phys. Rev. Lett. 88, 125508 (2002). See also C&E News 80, 38 (March 25, 2002).

K.S. Nakayama, E. Graugnard, and J.H. Weaver, "Tunneling Electron Induced Bromine Hopping on Si(100)-2x1," Phys. Rev. Lett. (in press).

G.J. Xu, K.S. Nakayama, B.R. Trenhaile, C.M. Aldao, and J.H. Weaver, "Equilibrium Morphologies for Cl-roughened Si(100) at 700-750 K: Dependence on Cl Concentration," Phys. Rev. B (submitted 11/15/02).

E. Graugnard, K.S. Nakayama, and J.H. Weaver, "Growth of Atom Vacancy Lines and Their Influence on the Roughening for Br-Si(100)," Phys. Rev. B.

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