J.M. Seo, S.G. Anderson, T. Komeda, C. Capasso, and J.H. Weaver, "Dynamic Photo-Induced Low Temperature Oxidation of GaAs(110)," Phys. Rev. B Rapid Commun. 41, 5455-5458 (1990).

S.G. Anderson, T. Komeda, J.M. Seo, C. Capasso, G.D. Waddill, P.J. Benning, and J.H. Weaver, "O2/GaAs(110) Interface Formation at 20 K: Photon-Induced Reaction and Desorption," Phys. Rev. B 42, 5082-5092 (1990).

J.M. Seo, Y.Z. Li, S.G. Anderson, D.J.W. Aastuen, U.S. Ayyala, G.H. Kroll, and J.H. Weaver, "X-Ray Induced Low Temperature Oxidation: N2O/GaAs(110)," Phys. Rev. B 42, 9080-9087 (1990).

S.G. Anderson, J.M. Seo, T. Komeda, C. Capasso, and J.H. Weaver, "Production of Highly Oxidized As on GaAs(110) at 20 K," Appl. Phys. Lett. 56, 2510-2512 (1990).

Y. Chen, Y.S. Luo, J.M. Seo, and J.H. Weaver, "The Role of O2 Negative-Ion Formation in Low Energy Electron-Induced Oxidation of InP(100)," Phys. Rev. B Rapid Commun. 43, 4527-4530 (1991).

S.G. Anderson, Y. Chen, J.M. Seo, and J.H. Weaver, "InP(110) Oxidation with O2, NO, and N2O at 20 K: Temperature and Photon Energy Dependencies," Phys. Rev. B 43, 9621-9625 (1991).

J.M. Seo, S.E. Harvey, Y. Chen, and J.H. Weaver, "Initial Stages of Oxidation of Si(111) with Condensed O2 and N2O at 20 K," Phys. Rev. B 43, 11893-11902 (1991).

Y. Chen, F. Stepniak, J.M. Seo, S.E. Harvey, and J.H. Weaver, "Effects of Surface Band Bending on Low Energy Photon-Induced Oxidation of GaAs(110)," Phys. Rev. B. Rapid Commun. 43, 12086-12089 (1991).

Y. Chen, J.M. Seo, S.G. Anderson, and J.H. Weaver, "Photon-Induced Oxidation of InP(110) with Condensed O2 at 25 K," Phys. Rev. B 44, 1699-1706 (1991).

G.H. Kroll, T.R. Ohno, and J.H. Weaver, "Nondisruptive Oxide Overlayer Growth on GaAs(110)," Appl. Phys. Lett. 58, 2249-2251 (1991).

G.H. Kroll, P.J. Benning, T.R. Ohno, J.H. Weaver, L.P.F. Chibante, and R.E. Smalley, "Interaction of O2 with C60: Photon-Induced Oxidation," Chem. Phys. Lett. 181, 112- 116 (1991).

J.M. Seo, Y. Chen, and J.H. Weaver, "Oxide Films Grown on GaAs(110) at 20 K: Stability during Cr Overlayer Formation," J. Appl. Phys. 70, 4336-4341 (1991).

Y. Chen, J.M. Seo, F. Stepniak, and J.H. Weaver, "Visible-Light-Induced Oxidation for O2 on GaAs(110): The Role of Hot Electrons," J. Chem. Phys. 95, 8442-8448 (1991).

Y.Z. Li, D.J.W. Aastuen, J.M. Seo, U.S. Ayyala, and J.H. Weaver, "Ti Overlayer Growth on Oxidized GaAs(110) vs. Ti Oxidation on Physisorbed O2 on GaAs(110) at 25 K," Surf. Sci. 250, 201-208 (1991).

F. Stepniak and J.H. Weaver, "Effect of Cl Incorporation during the Oxidation of Si," J. Vac. Sci. Technol. B 12, 3031-3035 (1994).

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