Electronic materials; interfaces and interface formation; ordered and disordered solids; clusters and fullerene-based systems; nanostructured materials; physical and chemical etching.
J.H. Weaver, H.M. Meyer III, D.M. Hill, D.L. Nelson, and R.K. Grasselli, "CaF2 Passivation Layers for High Temperature Superconductors," Patent No. 4,965,244.
J.H. Weaver, H.M. Meyer III, D.M. Hill, D.L. Nelson, and R.K. Grasselli, "Method of Depositing Oxide Passivation Layers on High Temperature Superconductors," Patent No. 5,196,379.
J.H. Weaver, C. Krafka, D.W. Lynch, and E.E. Koch, Optical Properties of Metals I: Transition Metals, 0.1-500 eV, Zentralstelle für Atomkernenergie-Dokumentation, ZAED, 1981, 344 pp.
J.H. Weaver, C. Krafka, D.W. Lynch, and E.E. Koch, Optical Properties of Metals II: Noble Metals, Aluminum, Lanthanides, and Actinides, 0.1-500 eV, Zentralstelle für Atomkernenergie-Dokumentation, ZAED, 1981, 320 pp.
J.H. Weaver, "Optical Properties of Metals," CRC Handbook of Chemistry and Physics, 64th-73rd Editions, E368-383.
J.H. Weaver and H.P.R. Frederikse, "Optical Properties of Metals and Semiconductors," CRC Handbook of Chemistry and Physics, 74th Edition and subsequent printings (CRC Press, Boca Raton, Florida) pp. 12-109 - 12-131.
G. Margaritondo and J.H. Weaver, "Photoemission Spectroscopy of Valence States," Chapter 3 in Methods in Experimental Physics: Surfaces, edited by M.G. Lagally and R.L. Park (Academic Press, NY) 1985, pp. 127-185.
J.H. Weaver et al., "High Tc Superconductors: Occupied and Unoccupied Electronic States, Surface Stability, and Interface Formation," Chapter 21 in Chemistry of High-Temperature Superconductors, edited by D.L. Nelson, M.S. Whittingham, and T.F. George, ACS Symposium Series 351, pp. 212-225 (1987).
J.H. Weaver, "Synchrotron Radiation Studies of Surfaces and Interfaces," Chapter 2 in Analytical Techniques for Thin Films, edited by K.N. Tu and R. Rosenberg (Academic Press, NY, 1988) pp. 15-63.
D.W. Lynch and J.H. Weaver, "Photoemission of Ce and Its Compounds," Chapter 66 in High Energy Spectroscopy, Handbook on the Physics and Chemistry of Rare Earths, Vol. 10, edited by K. A. Gschneidner and L. Eyring (North-Holland, Amsterdam, 1988) pp. 231-319.
D. Sahn, A. Langner, T.F. George, J.H. Weaver, H.M. Meyer III, D.L. Nelson, and A. Wold, "Overview of High Temperature Superconductivity: Theory, Surfaces, Interfaces, and Bulk Systems," Chapter 1 in Physical Chemistry of High Temperature Superconductors, edited by T.F. George and D.L. Nelson ACS Symposium Series 377, pp. 1-15 (1988).
H.M. Meyer III, D.M. Hill, J.H. Weaver, and D.L. Nelson, "Surface and Interface Properties of High Temperature Superconductors," Chapter 21 in Physical Chemistry of High Temperature Superconductors, edited by T.F. George and D.L. Nelson, ACS Symposium Series 377, pp. 280-290 (1988).
Synchrotron Radiation in Materials Research, Materials Research Society Proceedings, Vol. 143, edited by R. Clarke, J. Gland, and J.H. Weaver (1989).
J.H. Weaver, Zhangda Lin, and F. Xu, "Surface Segregation at Evolving Metal/Semiconductor Interfaces," Chapter 10 in Surface Segregation Phenomena, edited by P.A. Dowben and A. Miller (CRC Press, Boca Raton, 1990) pp. 259-289.
H.M. Meyer III and J.H. Weaver, "Electronic Structure, Surface Properties, and Interface Chemistry of High Temperature Superconductors," Chapter 6 in Physical Properties of High Temperature Superconductors II, edited by D.M. Ginsberg (World Scientific, Singapore, 1990) pp. 369-457.
J.H. Weaver, "The Formation and Properties of Metal-Semiconductor Interfaces," Chapter 8 in Electronic Materials: A New Era of Materials Science, Springer Series in Solid-State Sciences, Vol. 95, edited by J.R. Chelikowsky and A. Franciosi (Springer-Verlag, Berlin, 1991) pp. 135-214.
C.M. Aldao and J.H. Weaver "Atomic-Scale Chemistry of Metal-Semiconductor Interfaces," Chapter 7 in Contacts to Semiconductor Surfaces, edited by L.J. Brillson (Noyes Publication, New Jersey, 1993) pp. 465-555.
J.H. Weaver, "Overlayer Formation on High Temperature Superconductors," Chapter 7 in Interfaces in Superconducting Systems, edited by S. Shindé and D. Rudman (Springer-Verlag, Berlin, 1993) pp. 210-235.
J.H. Weaver, G.D. Waddill, I.M. Vitomirov, and C.M. Aldao, "Cluster-Assembled Interfaces," in On Clusters and Clustering: From Atoms to Fractals, edited by Peter J. Reynolds (North Holland, 1993) pp. 179-192.
J.H. Weaver and D.M. Poirier, "Solid State Properties of Fullerenes and Fullerene-Based Materials," Chapter 1 in Fullerene Fundamentals, Solid State Physics Vol. 48, edited by H. Ehrenreich and F. Spaepen (Academic Press, Cambridge, 1994) pp. 1-108.
D.M. Poirier and J.H. Weaver, "Standard and Reference XPS Spectra for Cleaved Semiconductors: Group IV, III-V, and II-VI [Si(111), Ge(111), GaP(110), GaAs(110), InP(110), InAs(110), InSb(110), CdS, CdTe(110), diamond, graphite, and C60]," Special Issue of Surface Science Spectra (1993/1994) pp. 195-269.
J.H. Weaver, "Fullerenes Viewed with STM, Photoemission, and Inverse Photoemission," Chapter 17 in the Handbook of Surface Imaging and Visualization, edited by A. Hubbard (CRC Press, Boca Raton, Florida, 1995), pp. 215-222.
J.H. Weaver and C.M. Aldao, "Spontaneous Etching of Si with Br, Cl, and I," in Morphological Organizations during Epitaxial Growth and Removal, edited by Z.Y. Zhang and M.G. Lagally (World Scientific Series on Directions of Condensed Matter Physics, 1999) pp. 453-484.
C.M. Aldao and J.H. Weaver , "Halogen Etching of Si via Atomic-scale Processes," Review Article, Progress in Surface Science 6 8, 189-230 (2001).
E.M. Rowe and J.H. Weaver, "The Uses of Synchrotron Radiation," Scientific American 236, 32-41 (1977).
J.H. Weaver and E.M. Rowe, "Synchrotron Radiation and Its Influence on Modern Science: A Tutorial Article," Physics Teacher 15, 268-274 (1977).
D.L. Westlake, C.B. Satterthwaite, and J.H. Weaver, "Hydrogen in Metals," Physics Today 31, 32-39 (1978), and cover photo.
J.H. Weaver and G. Margaritondo, "Solid State Photoelectron Spectroscopy with Synchrotron Radiation," Science 206, 151-156 (1979), and cover photo. G. Margaritondo and J.H. Weaver, "Synchrotron Radiation Resource Letter," American Journal of Physics 52, 590-597 (1984).
J.H. Weaver, "Metal/Semiconductor Interfaces," Physics Today 39, 24-30 (1986), and cover photo. Translated into Japanese in Parity 1, 2-11 (1986) and Parity 3, 74-83 (1987).
D.L. Nelson, D. Sahn, A. Langner, T.F. George, J.H. Weaver, H.M. Meyer, and A. Wold, "Overview of High-Temperature Superconductivity: Theory, Surfaces, Interfaces, and Bulk Systems," Naval Research Reviews, Office of Naval Research, Four / 1988 - One / 1989, Vol. XL / XLI, pp. 15-23.
J.H. Weaver and G.D. Waddill, "Cluster-Assembly of Interfaces: Nanoscale Engineering," Science 251, 1444-1451 (1991). J.H. Weaver, "Clusters, Their Growth, and Their Interaction with Surfaces," Naval Research Reviews, Office of Naval Research, Three / 1991, Vol XLII, pp. 16-27.
Y.Z. Li and J.H. Weaver, "Direct Imaging of Fullerenes using Scanning Tunneling Microscopy," Research and Development Magazine, Vol. 33, December 1991, pp. 38-40.
J.H. Weaver, "Fullerenes and Fullerides: Photoemission and Scanning Tunneling Microscopy Studies," Accounts of Chemical Research 25, 143-149 (1992).
J.H. Weaver, "Have buckyballs been put to any practical use?," in Ask the Experts, Scientific American Online, Week of July 7, 1997 issue <http://www.sciam.com/>.
B.Y. Han and J.H. Weaver, "Spontaneous and Laser-enhanced Halogen Etching of GaAs," Journal of Physics: Condensed Matter 10, 7723-7742 (1998).
J.J. Boland and J.H. Weaver, "A Surface View of Etching," Physics Today 51, 34-40 (1998).