J.H. Weaver, "Synchrotron Radiation Studies of Surfaces and Interfaces," Chapter 2 in Analytical Techniques for Thin Films, edited by K.N. Tu and R. Rosenberg (Academic Press, NY, 1988) pp. 15-63.

J.H. Weaver, Zhangda Lin, and F. Xu, "Surface Segregation at Evolving Metal/Semiconductor Interfaces," Chapter 10 in Surface Segregation Phenomena, edited by P.A. Dowben and A. Miller (CRC Press, Boca Raton, 1990) pp. 259-289.

J.H. Weaver, "The Formation and Properties of Metal-Semiconductor Interfaces," Chapter 8 in Electronic Materials: A New Era of Materials Science, Springer Series in Solid-State Sciences, Vol. 95, edited by J.R. Chelikowsky and A. Franciosi (Springer-Verlag, Berlin, 1991) pp. 135-214.

C.M. Aldao and J.H. Weaver "Atomic-Scale Chemistry of Metal-Semiconductor Interfaces," Chapter 7 in Contacts to Semiconductor Surfaces, edited by L.J. Brillson (Noyes Publication, New Jersey, 1993) pp. 465-555.

J.H. Weaver, G.D. Waddill, I.M. Vitomirov, and C.M. Aldao, "Cluster-Assembled Interfaces," in On Clusters and Clustering: From Atoms to Fractals, edited by Peter J. Reynolds (North Holland, 1993) pp. 179-192.

D.M. Poirier and J.H. Weaver, "Standard and Reference XPS Spectra for Cleaved Semiconductors: Group IV, III-V, and II-VI [Si(111), Ge(111), GaP(110), GaAs(110), InP(110), InAs(110), InSb(110), CdS, CdTe(110), diamond, graphite, and C60]," Special Issue of Surface Science Spectra (1993/1994) pp. 195-269.

J.H. Weaver, "Metal/Semiconductor Interfaces," Physics Today 39, 24-30 (1986), and cover photo. Translated into Japanese in Parity 1, 2-11 (1986) and Parity 3, 74-83 (1987).

J.H. Weaver and C.M. Aldao, "Spontaneous Etching of Si with Br, Cl, and I," in Morphological Organizations during Epitaxial Growth and Removal, edited by Z.Y. Zhang and M.G. Lagally (World Scientific Series on Directions of Condensed Matter Physics, 1999) pp. 453-484.

J.J. Boland and J.H. Weaver, "A Surface's Perspective of Etching," Physics Today 51, 34-40 (1998).

Refereed Publications:

A. Franciosi, D.J. Peterman, J.H. Weaver, and V.L. Moruzzi, "Structural Morphology and Electronic Properties of the Si-Cr Interface," Phys. Rev. B 25, 4981-4993 (1982).

Y. Chabal, A. Franciosi, J.H. Weaver, J.E. Rowe, and J.M. Poate, "Stoichiometric and Structural Disorder Effects in the Electronic Structure of Ni and Pd Silicides," Phys. Rev. B 26, 2748-2758 (1982).

A. Franciosi, J.H. Weaver, D.G. O'Neill, Y. Chabal, J.E. Rowe, J.M. Poate, O. Bisi, and C. Calandra, "Chemical Bonding at the Si-Metal Interface: Si-Ni and Si-Cr," J. Vac. Sci. Technol. 21, 624-627 (1982).

A. Franciosi and J.H. Weaver, "Bulk Silicides and Si-Metal Interface Reaction: Pd2Si," Phys. Rev. B 27, 3554-3561 (1983).

A. Franciosi and J.H. Weaver, "Si-Cr and Si-Pd Interface Reaction and Bulk Electronic Structure of Ti, V, Cr, Co, Ni, and Pd Silicides," Surface Sci. 132, 324-335 (1983).

A. Franciosi and J.H. Weaver, "Si-Metal Interface Reaction and Bulk Electronic Structure of Silicides," Physica B 117-118, 846 (1983).

A. Franciosi, D.G. O'Neill, and J.H. Weaver, "Modulation of the Morphology and Electronic Properties of the Si(111)-Au Interface," J. Vac. Sci. Technol. B 1, 524-529 (1983).

A. Franciosi, J.H. Weaver, P. Perfetti, A.D. Katnani, and G. Margaritondo, "Samarium Valence Changes and Reactive Interdiffusion at the Si(111)-Sm Interface," Solid State Commun. 47, 427 (1983).

M. N. Piancastelli, F. Cerrina, G. Margaritondo, A. Franciosi, and J.H. Weaver, "A Strongly Bound Chemisorption State for Benzene on Si(111)," Appl. Phys. Lett. 42, 990-992 (1983).

A. Franciosi, J.H. Weaver, and D.G. O'Neill, "An Interface Catalytic Effect: Cr at the Si(111)-Au Interface," Phys. Rev. B - Rapid Commun. 28, 4889-4892 (1983).

A. Franciosi, J.H. Weaver, D.G. O'Neill, F.A. Schmidt, O. Bisi, and C. Calandra, "Electronic Structure of Cr Silicides and Si-Cr Interface Reactions," Phys. Rev. B 28, 7000-7008 (1983).

A. Franciosi, P. Perfetti, A.D. Katnani, J.H. Weaver, and G. Margaritondo, "Samarium Chemisorption on Group IV Semiconductors," Phys. Rev. B 29, 5611-5616 (1984).

M. Grioni, J.J. Joyce, S.A. Chambers, D.G. O'Neill, M. del Giudice, and J.H. Weaver, "Cluster Induced Reactions at a Metal-Semiconductor Interface: Ce/Si(111)," Phys. Rev. Lett. 53, 2331-2334 (1984).

M. Grioni, J.J. Joyce, M. del Giudice, D.G. O'Neill, and J.H. Weaver, "Modeling of a Heterogeneous Metal/Semiconductor Interface: Ce on Si(111)," Phys. Rev. B - Rapid Commun. 30, 7370-7373 (1984).

A. Franciosi, J.H. Weaver, and D.T. Peterson, "Silicon Interaction with Low Electronegativity Metals: Interdiffusion and Reaction at the Si(111)-Ca Interface," Phys. Rev. B 31, 3606-3610 (1985).

A. Fujimori, M. Grioni, J.J. Joyce, and J.H. Weaver, "4f Photoemission from Ce/Si and Ce/GaAs Interfaces," Phys. Rev. - Rapid Commun. B 31, 8291-8294 (1985).

S.A. Chambers, G.A. Howell, T.R. Greenlee, and J.H. Weaver, "Characterization of Intermixing in Metal-Semiconductor Interfaces by Means of Angle-Resolved Auger Electron Emission: Cu/Si(111)7x7," Phys. Rev. B 31, 6402-6410 (1985).

M. Grioni, M. del Giudice, J.J. Joyce, and J.H. Weaver, "Modeling of Interface Reaction Products with High Resolution Core Level Photoemission," J. Vac. Sci. Technol. A 3, 907-910 (1985).

S.A. Chambers, T.R. Greenlee, G.A. Howell, and J.H. Weaver, "Quantitative Interdiffusion Studies of Noble Metal/Si(111)-7x7 Interfaces by Angle-Resolved Auger Electron Emission," J. Vac. Sci. Technol. A 3, 1291-1294 (1985).

S.A. Chambers and J.H. Weaver, "Thermally Induced Structural and Compositional Modification of the Cu/Si(111)-7x7 Interface," J. Vac. Sci. Technol. A 3, 1929-1934 (1985).

S.A. Chambers, S.B. Anderson, and J.H. Weaver, "Atomic Structure of the Cu/Si (111) Interface by High-Energy Core-Level Auger Electron Diffraction," Phys. Rev. B 32, 581-587 (1985).

M.W. Ruckman, M. del Giudice, and J.H. Weaver, "Temperature Dependent Growth Morphology of a Semiconductor/Metal Interface: Ge/Ta(110)," Phys. Rev. B 32, 1077- 1084 (1985).

M. del Giudice, J.J. Joyce, M.W. Ruckman, and J.H. Weaver, "Cluster Formation and Atomic Intermixing at the Reactive V/Ge(111) Interface," Phys. Rev. B 32, 5149-5155 (1985).

A. Fujimori, M. Grioni, and J.H. Weaver, "Rare-Earth-Metal/Semiconductor Interfacial Reactions: Thermodynamic Aspects," Phys. Rev. B 33, 726-735 (1986).

M. del Giudice, M. Grioni, J.J. Joyce, M.W. Ruckman, S.A. Chambers, and J.H. Weaver, "Modeling Homogeneous and Heterogeneous Metal/Semiconductor Interface Reactions with Photoemission and Angle Resolved Auger Spectroscopies," Surf. Sci. 168, 309-322 (1986).

S.A. Chambers, S.B. Anderson, and J.H. Weaver, "Surface Structural Determination of Metal/Semiconductor Interfaces by Angle-Resolved Auger Electron Emission," Appl. Surf. Sci. 26, 542-549 (1986).

R.A. Butera, M. del Giudice, and J.H. Weaver, "Quantitative Modeling of Reactive Metal/Semiconductor Interface Growth using High Resolution Photoemission Results," Phys. Rev. B 33, 5435-5449 (1986).

M.W. Ruckman, M. del Giudice, J.J. Joyce, and J.H. Weaver, "Comparative Study of the Formation of Cr/Ge and Ge/Cr Thin Film Interfaces," Phys. Rev. B 33, 8039-8047 (1986).

M.W. Ruckman, M. del Giudice, J.J. Joyce, and J.H. Weaver, "Soft X-Ray Photoemission Study of Cr-Ge Atomic Intermixing on Crystalline and Amorphous Ge Surfaces," Phys. Rev. B 34, 4010-4016 (1986).

S.A. Chambers, M. del Giudice, M.W. Ruckman, S.B. Anderson, J.H. Weaver, and G.J. Lapeyre, "High-Resolution Electron Energy Loss Spectroscopy as a Probe of Surface Electronic States at Metal/Semiconductor Interfaces," J. Vac. Sci. Technol. A 4, 1595-1598 (1986).

M. del Giudice, R.A. Butera, M.W. Ruckman, J.J. Joyce, and J.H. Weaver, "V/Ge(111) - Temperature Dependent Intermixing Studied with High Resolution Photoemission and Quantitative Modeling," J. Vac. Sci. Technol. A 4, 879-881 (1986).

S.A. Chambers, S.B. Anderson, H.-W. Chen, and J.H. Weaver, "High-Temperature Nucleation and Silicide Formation at the Co/Si(111)-7x7 Interface - A Structural Study," Phys. Rev. B 34, 913-920 (1986).

M.W. Ruckman, J.J. Joyce, F. Boscherini, and J.H. Weaver, "Asymmetries in Atomic Intermixing at Au/Ge and Ge/Au Interfaces," Phys. Rev. B 34, 5118-5124 (1986).

S.A. Chambers, D.M. Hill, F. Xu, and J.H. Weaver, "Silicide Formation at the Ti/Si(111) Interface: Diffusion Parameters and Behavior at Elevated Temperatures," Phys. Rev. B 35, 634-640 (1987).

F. Boscherini, J.J. Joyce, M.W. Ruckman, and J.H. Weaver, "High Resolution Photoemission Study of Co/Si(111) Interface Evolution," Phys. Rev. B 35, 4216-4220 (1987).

M. del Giudice, J.J. Joyce, M.W. Ruckman, and J.H. Weaver, "Silicide Formation at the Ti/Si(111) Interface: Reaction and Schottky Barrier Formation," Phys. Rev. B 35, 6213-6221 (1987).

A. Fujimori, M. Grioni, J.J. Joyce, and J.H. Weaver, "Chemical Bonding in Ordered Ce Overlayers on Si(111)," Phys. Rev. B 36, 1075-1079 (1987).

R. Butera, M. del Giudice, and J.H. Weaver, "Temperature Dependent Interface Evolution: Modeling of Core Level Photoemission Results for V/Ge(111)," Phys. Rev. B 36, 4754-4760 (1987).

M. del Giudice, J.J. Joyce, and J.H. Weaver, "Core Level Binding Energy Shifts, Thermodynamic Predictions, and Morphologies for Metal/Si and Metal/Ge Interfaces," Phys. Rev. B 36, 4761-4768 (1987).

F. Xu, C.M. Aldao, I.M. Vitomirov, and J.H. Weaver, "Abruptness of Au-Si Contacts with Thin CoSi2 Interlayers," Appl. Phys. Lett. 51, 1946-1948 (1987).

F. Xu, M. Vos, and J.H. Weaver, "Influence of Au Overlayers on Valence Band Offsets for Buried CaF2/Si(111) Interfaces," Phys. Rev. B Rapid Commun. 39, 8008-8011 (1989).

J.R. Chelikowsky, T.J. Wagener, and J.H. Weaver, and A. Jin "Valence and Conduction Band Densities of States for Tetrahedral Semiconductors: Theory and Experiment," Phys. Rev. B 40, 9644-9651 (1989).

F. Xu, D.M. Hill, P.J. Benning, and J.H. Weaver, "Activated Metal Deposition and Oxide Growth on Semiconductors: TiO2/Si(111)-2x1," J. Vac. Sci. Technol. A 7, 2593-2597 (1989).

M. Vos, F. Xu, and J.H. Weaver, "Metal/CaF2/Si Heterostructures: Interface Evolution and Electronic Properties," J. Appl. Phys. 66, 2467-2474 (1989).

G.D. Waddill, I.M. Vitomirov, C.M. Aldao, S.G. Anderson, C. Capasso, J.H. Weaver, and Z. Liliental-Weber, "Abrupt Interfaces with Novel Structural and Electronic Properties: Metal Cluster Deposition and Metal-Semiconductor Junctions," Phys. Rev. B 41, 5293-5305 (1990).

J.H. Weaver, "Clusters, Their Growth, and Their Interaction with Surfaces," Naval Research Reviews, Office of Naval Research, Three/1991, Vol. XLIII, pp. 16-27.

M. Chander, Y.Z. Li, J.C. Patrin, and J.H. Weaver, "Si(001)-2x1 Surface Defects and Dissociative and Nondissociative Adsorption of H2O : An STM Study," Phys. Rev. B 48, 2493-2499 (1993).

D. Rioux, M. Chander, Y.Z. Li, and J.H. Weaver, "Bromine Interaction with Si(100)-2x1: Chemisorption and the Initial Stages of Etching," Phys. Rev. B 49, 11071-11079 (1994).

D. Rioux, R.J. Pechman, M. Chander, and J.H. Weaver, "Temperature Dependent Surface Morphologies for Br-etched Si(100)-2x1," Phys. Rev. B 50, 4430-4438 (1994).

M. Chander, D.A. Goetsch, C.M. Aldao, and J.H. Weaver, "Determination of Dynamic Parameters Controlling Atomic Scale Etching of Si(100)-2x1 by Chlorine," Phys. Rev. Lett. 74, 2014-2017 (1995).

D. Rioux, F. Stepniak, R.J. Pechman, and J.H. Weaver, "Chemisorption and Thermally-activated Etching of Si(100)-2x1 by Iodine," Phys. Rev. B 51, 10981-10988 (1995).

M. Chander, D.A. Goetsch, C.M. Aldao, and J.H. Weaver, "Etching of Si(100)-2x1 with Chlorine: Reaction Pathways, Energy Anisotropies, and Atomic Scale Phenomena," Phys. Rev. B 52, 8288-8294 (1995).

R.J. Pechman, X.-S. Wang, and J.H. Weaver, "Interactions of Br with Si(111)-7x7: Chemisorption, Step Retreat, and Terrace Etching," Phys. Rev. B 52, 11412-11423 (1995).

J.R. Sánchez, C.M. Aldao, and J.H. Weaver, "Analysis and Monte Carlo Simulations of Spontaneous Etching: Cl-Si(100)-2x1," J. Vac. Sci. Technol. B 13, 2230-2233 (1995).

R.J. Pechman, T. Moriwaki, J.H. Weaver, and G.S. Khoo, "Formation of Br-terminated Si6 Rings during Etching of Si(111)7x7," Surf. Sci. Lett. 341, L1085-1090 (1995).

J.H. Weaver, "Synchrotron Radiation Studies of Surfaces and Interfaces," Chapter 2 in Analytical Techniques for Thin Films, edited by K.N. Tu and R. Rosenberg (Academic Press, NY, 1988) pp. 15-63.

J.H. Weaver, Zhangda Lin, and F. Xu, "Surface Segregation at Evolving Metal/Semiconductor Interfaces," Chapter 10 in Surface Segregation Phenomena, edited by P.A. Dowben and A. Miller (CRC Press, Boca Raton, 1990) pp. 259-289.

J.H. Weaver, "The Formation and Properties of Metal-Semiconductor Interfaces," Chapter 8 in Electronic Materials: A New Era of Materials Science, Springer Series in Solid-State Sciences, Vol. 95, edited by J.R. Chelikowsky and A. Franciosi (Springer-Verlag, Berlin, 1991) pp. 135-214.

C.M. Aldao and J.H. Weaver "Atomic-Scale Chemistry of Metal-Semiconductor Interfaces," Chapter 7 in Contacts to Semiconductor Surfaces, edited by L.J. Brillson (Noyes Publication, New Jersey, 1993) pp. 465-555.

J.H. Weaver, G.D. Waddill, I.M. Vitomirov, and C.M. Aldao, "Cluster-Assembled Interfaces," in On Clusters and Clustering: From Atoms to Fractals, edited by Peter J. Reynolds (North Holland, 1993) pp. 179-192.

D.M. Poirier and J.H. Weaver, "Standard and Reference XPS Spectra for Cleaved Semiconductors: Group IV, III-V, and II-VI [Si(111), Ge(111), GaP(110), GaAs(110), InP(110), InAs(110), InSb(110), CdS, CdTe(110), diamond, graphite, and C60]," Special Issue of Surface Science Spectra (1993/1994) pp. 195-269.

J.H. Weaver, "Metal/Semiconductor Interfaces," Physics Today 39, 24-30 (1986), and cover photo. Translated into Japanese in Parity 1, 2-11 (1986) and Parity 3, 74-83 (1987).

B.Y. Han and J.H. Weaver, "Spontaneous and Laser-enhanced Halogen Etching of GaAs," Journal of Physics: Condensed Matter 10, 7723-7742 (1998) (in press).

J.H. Weaver and J.J. Boland, "Semiconductor Etching," Physics Today 51, 34-40 (1998).

Refereed Publications:

J.H. Weaver, M. Grioni, and J.J. Joyce, "Critical Development Stages for the Reactive Cr-GaAs(110) Interface," Phys. Rev. B 31, 5348-5354 (1985).

J.H. Weaver, M. Grioni, J.J. Joyce, and M. del Giudice, "Reactions at a Rare-Earth/GaAs Interface: Ce/GaAs(110)," Phys. Rev. B 31, 5290-5296 (1985).

A. Fujimori, M. Grioni, J.J. Joyce, and J.H. Weaver, "4f Photoemission from Ce/Si and Ce/GaAs Interfaces," Phys. Rev. - Rapid Commun. B 31, 8291-8294 (1985).

M. Grioni, M. del Giudice, J.J. Joyce, and J.H. Weaver, "Modeling of Interface Reaction Products with High Resolution Core Level Photoemission," J. Vac. Sci. Technol. A 3, 907-910 (1985).

M. Grioni, J.J. Joyce, and J.H. Weaver, "Room Temperature Reaction at a Refractory Metal-Semiconductor Interface: V/GaAs(110)," J. Vac. Sci. Technol. A 3, 918-921 (1985).

M. Grioni, J.J. Joyce, and J.H. Weaver, "Adatom Aggregation, Reaction, and Chemical Trapping at the Sm/GaAs(110) Interface," Phys. Rev. B 32, 962-968 (1985).

A. Fujimori, M. Grioni, and J.H. Weaver, "Rare-Earth-Metal/Semiconductor Interfacial Reactions: Thermodynamic Aspects," Phys. Rev. B 33, 726-735 (1986).

M.W. Ruckman, M. del Giudice, J.J. Joyce, and J.H. Weaver, "Photoemission Study of the Development of the Ti/GaAs(110) Interfaces," Phys. Rev. B 33, 2191-2197 (1986).

M. del Giudice, M. Grioni, J.J. Joyce, M.W. Ruckman, S.A. Chambers, and J.H. Weaver, "Modeling Homogeneous and Heterogeneous Metal/Semiconductor Interface Reactions with Photoemission and Angle Resolved Auger Spectroscopies," Surf. Sci. 168, 309-322 (1986).

S.A. Chambers, S.B. Anderson, and J.H. Weaver, "Surface Structural Determination of Metal/Semiconductor Interfaces by Angle-Resolved Auger Electron Emission," Appl. Surf. Sci. 26, 542-549 (1986).

R.A. Butera, M. del Giudice, and J.H. Weaver, "Quantitative Modeling of Reactive Metal/Semiconductor Interface Growth using High Resolution Photoemission Results," Phys. Rev. B 33, 5435-5449 (1986).

M.W. Ruckman, J.J. Joyce, and J.H. Weaver, "Interdiffusion and Reaction at the Fe/GaAs(110) Interface," Phys. Rev. B 33, 7029-7035 (1986).

M. Grioni, J.J. Joyce, and J.H. Weaver, "Metal-Anion Bond Strength and Room Temperature Diffusion at Metal/GaAs Interfaces: Transition vs. Rare-Earth Metals," J. Vac. Sci. Technol. A 4, 965-968 (1986).

S.A. Chambers, M. del Giudice, M.W. Ruckman, S.B. Anderson, J.H. Weaver, and G.J. Lapeyre, "High-Resolution Electron Energy Loss Spectroscopy as a Probe of Surface Electronic States at Metal/Semiconductor Interfaces," J. Vac. Sci. Technol. A 4, 1595-1598 (1986).

S.A. Chambers, F. Xu, H.-W. Chen, I.M. Vitomirov, S.B. Anderson, and J.H. Weaver, "Simultaneous Epitaxy and Substrate Outdiffusion at a Metal/Semiconductor Interface: Fe/GaAs(001)," Phys. Rev. B 34, 6605-6611 (1986).

F. Xu, J.J. Joyce, M.W. Ruckman, H.-W. Chen, F. Boscherini, D.M. Hill, S.A. Chambers, and J.H. Weaver, "Epitaxy, Overlayer Growth, and Surface Segregation for Co/GaAs(110) and Co/GaAs(100)-c(8x2)," Phys. Rev. B 35, 2375-2382 (1987).

F. Xu, Yoram Shapira, D.M. Hill, and J.H. Weaver, "Atom Profiles of Interfaces with Polar-Angle-Dependent Photoemission: Au/GaAs(100)," Phys. Rev. B 35, 7417-7422 (1987).

F. Xu, Zhangda Lin, D.M. Hill, and J.H. Weaver, "Temperature Dependent Reaction and Buried Interface Movement for Ti/GaAs(100) and Cr/GaAs(100)," Phys. Rev. B Rapid Commun. 35, 9353-9356 (1987).

F. Boscherini, Yoram Shapira, C. Capasso, C. Aldao, M. del Giudice, and J.H. Weaver, "Exchange Reaction, Clustering, and Surface Segregation at the Al/InSb(110) Interface," Phys. Rev. B 35, 9580-9585 (1987).

J.J. Joyce, F. Boscherini, M.W. Ruckman, and J.H. Weaver, "Chemical Trapping and Modification of the Au/GaAs(110) Interface using Sm Interlayers," Phys. Rev. B 36, 1605-1611 (1987).

F. Xu, C.M. Aldao, I.M. Vitomirov, Zhangda Lin, and J.H. Weaver, "Direct Evidence of the Onset of In Surface Segregation for Co/InP(110)," Phys. Rev. Rapid Commun. B 36, 3495-3498 (1987).

Zhangda Lin, F. Xu, and J.H. Weaver, "Surface Segregation at Metal/III-V Semiconductor Interfaces," Phys. Rev. B 36, 5777-5784 (1987).

F. Xu, Zhangda Lin, D.M. Hill, and J.H. Weaver, "Temperature Dependent Interface Evolution for Ti/GaAs(100) and Cr/GaAs(100)," Phys. Rev. B 36, 6624-6630 (1987).

Yoram Shapira, F. Boscherini, C. Capasso, F. Xu, D.M. Hill, and J.H. Weaver, "Au/InSb(110) Interface Profiles from Synchrotron Radiation and Polar Angle Dependent XPS," Phys. Rev. B 36, 7656-7659 (1987).

Yoram Shapira, F. Xu, D.M. Hill, and J.H. Weaver, "Use of Polar Angle Dependent Photoemission for Atom Profiling: Au on Compound Semiconductors," Appl. Phys. Lett. 51, 118-120 (1987).

J.J. Joyce, M. Grioni, M. del Giudice, M.W. Ruckman, F. Boscherini, and J.H. Weaver, "Systematics of Electronic Structure and Local Bonding for Metal/GaAs(110) Interfaces," J. Vac. Sci. Technol. A 5, 2019-2023 (1987).

F. Boscherini, Yoram Shapira, C. Capasso, C. Aldao, and J.H. Weaver, "Cr/InSb(110): A Study of Interface Development with High Resolution Core Level Photoemission," J. Vac. Sci. Technol. B 5, 1003-1006 (1987).

C.M. Aldao, I.M. Vitomirov, F. Xu, and J.H. Weaver, "3d Transition Metals on InP(110): A Comparative Study of Reactive Interface Evolution," Phys. Rev. B 37, 6019-6026 (1988).

F. Boscherini, Yoram Shapira, C. Capasso, and J.H. Weaver, "Synchrotron Radiation Photoemission Studies of Cu/InSb(110) Interface Evolution and Modification by Al Interlayers," Phys. Rev. B 37, 8022-8026 (1988).

F. Xu, D.M. Hill, Zhangda Lin, S.G. Anderson, Yoram Shapira, and J.H. Weaver, "Temperature Dependent Reaction and Atomic Redistribution for Ti/GaAs(100) Interfaces," Phys. Rev. B 37, 10295-10300 (1988).

D.M. Hill, F. Xu, Zhangda Lin, and J.H. Weaver, "Atomic Distributions Across Metal/III-V Compound Semiconductor Interfaces," Phys. Rev. B 38, 1893-1900 (1988).

I.M. Vitomirov, C.M. Aldao, Zhangda Lin, Y. Gao, B.M. Trafas, D.M. Hill, H.M. Meyer III, and J.H. Weaver, "Pd Overlayer Growth on InP(110), GaAs(110), and InSb(110): Comparison of Anion Surface Segregation," Phys. Rev. B 38, 10776-10786 (1988).

C.M. Aldao, I.M. Vitomirov, G.D. Waddill, and J.H. Weaver, "Interface Growth with Atoms and Preformed Clusters: Morphology and Schottky Barrier Variations for Au/InP(110)," Appl. Phys. Lett. 53, 2647-2649 (1988).

G.D. Waddill, I.M. Vitomirov, C.M. Aldao, and J.H. Weaver, "Cluster Deposition on GaAs(110): Formation of Abrupt, Defect-Free Interfaces," Phys. Rev. Lett. 62, 1568-1572 (1989).

C.M. Aldao, S.G. Anderson, C. Capasso, I.M. Vitomirov, G.D. Waddill, and J.H. Weaver, "Dopant Concentration Dependences and Symmetric Fermi Level Movement for Metal/n- and p-GaAs(110) Interfaces Formed at 60 K," Phys. Rev. B Rapid Commun. 39, 12977-12980 (1989).

Y. Hu, T.J. Wagener, M.B. Jost, and J.H. Weaver, "Evolution of Empty State Bands for Bi/GaAs(110): From Bi Zig-zag Chains to Ordered Overlayers," Phys. Rev. B 40, 1 146-1151 (1989).

C.M. Aldao, G.D. Waddill, S.G. Anderson, and J.H. Weaver, "Temperature Effects for Ti/GaAs(110) Interface Formation Involving Cluster and Atom Deposition," Phys. Rev. B 40, 2932-2939 (1989).

I.M. Vitomirov, G.D. Waddill, C.M. Aldao, S.G. Anderson, C. Capasso, and J.H. Weaver, "Reversible Temperature-Dependent Fermi Level Movement for Metal-GaAs(110) Interfaces," Phys. Rev. B - Rapid Commun. 40, 3483-3486 (1989).

C.M. Aldao, I.M. Vitomirov, F. Xu, and J.H. Weaver, "Disruption, Morphology, and Energy Levels for Ge/GaAs(110), Ge/InP(110), and Ge/InSb(110) Heterojunctions," Phys. Rev. B 40, 3711-3719 (1989).

B.M. Trafas, F. Xu, M. Vos, C.M. Aldao, and J.H. Weaver, "Systematics of Metal/GaP(110) Interface Formation: Ti, Pd, Au, and Ag Adatom Deposition," Phys. Rev. B 40, 4022-4029 (1989).

S.G. Anderson, C.M. Aldao, G.D. Waddill, I.M. Vitomirov, S.J. Severtson, and J.H. Weaver, "Al/GaAs(110) Temperature Dependent Interface Formation and Overlayer Energy References," Phys. Rev. B 40, 8305-8312 (1989).

J.R. Chelikowsky, T.J. Wagener, and J.H. Weaver, and A. Jin "Valence and Conduction Band Densities of States for Tetrahedral Semiconductors: Theory and Experiment," Phys. Rev. B 40, 9644-9651 (1989).

B.M. Trafas, C.M. Aldao, C. Capasso, Yoram Shapira, F. Boscherini, I.M. Vitomirov, and J.H. Weaver, "Development of Rare Earth/Semiconductor Interfaces: Ce/InP(110), Sm/InSb(110), and Ce/CdTe(110)," Phys. Rev. B 40, 9811-9817 (1989).

I.M. Vitomirov, C.M. Aldao, M.C. Schabel, G.D. Waddill, S.G. Anderson, and J.H. Weaver, "Energies and Symmetries in Interface Formation: In/GaP(110) and Ga/InP(110)," J. Vac. Sci. Technol. A 7, 758-764 (1989).

C.M. Aldao, G.D. Waddill, I.M. Vitomirov, and J.H. Weaver, "Interface Formation by Atom and Cluster Deposition: Novel Electronic and Structural Properties," J. Vac. Sci. Technol. A 7, 817-821 (1989).

G.D. Waddill, C.M. Aldao, I.M. Vitomirov, Y. Gao, and J.H. Weaver, "Temperature Dependent Interface Morphology and Schottky Barrier Evolution for Au/InP(110)," J. Vac. Sci. Technol. A 7, 865-869 (1989).

G.D. Waddill, C. Aldao, I.M. Vitomirov, S.G. Anderson, C. Capasso, and J.H. Weaver, "Ag and Co Cluster Deposition on GaAs(110): Fermi Level Pinning in the Absence of Metal-Induced Gap States and Defects," J. Vac. Sci. Technol. B 7, 950-957 (1989).

S.G. Anderson, C.M. Aldao, G.D. Waddill, I.M. Vitomirov, C. Capasso, and J.H. Weaver, "Fermi Level Movement for Metal/n- and p-GaAs Interfaces: Effects of Temperature and Dopant Concentrations," Appl. Phys. Lett. 55, 2547-2549 (1989).

C.M. Aldao, I.M. Vitomirov, G.D. Waddill, S.G. Anderson, and J.H. Weaver, "Dynamic Coupling Model: Temperature-, Dopant-Concentration, and Coverage-Dependent Schottky Barrier Formation," Phys. Rev. B 41, 2800-2812 (1990).

Y.-J. Hu, T.J. Wagener, M.B. Jost, and J.H. Weaver, "Epitaxial Sn and Bi on GaAs(110): Inverse Photoemission, Shallow Core-Hole Emission, and Ga 3d Excitons," Phys. Rev. B 41, 5817-5824 (1990).

G.D. Waddill, C.M. Aldao, C. Capasso, P.J. Benning, Yongjun Hu, T.J. Wagener, M.B. Jost, and J.H. Weaver, "Thermally-Reversible Band Bending for Bi/GaAs(110): Photoemission and Inverse Photoemission Investigations," Phys. Rev. B 41, 5960-5968 (1990).

C.M. Aldao, G.D. Waddill, P.J. Benning, C. Capasso, and J.H. Weaver, "Photovoltaic Effects in Temperature-Dependent Fermi Level Movement for GaAs(110)," Phys. Rev. B Rapid Commun. 41, 6092-6095 (1990).

I.M. Vitomirov, C.M. Aldao, G.D. Waddill, C. Capasso, and J.H. Weaver, "Metal-InP(110) Interface Properties: Temperature-, Dopant-Concentration-, and Cluster Dependencies," Phys. Rev. B 41, 8465-8476 (1990).

G.D. Waddill, T. Komeda, Y.-N. Yang, and J.H. Weaver, "Photoemission from Metal Dots on GaAs(110): Surface Photovoltages and Surface Conductance," Phys. Rev. B Rapid Commun. 41, 10283-10286 (1990).

C.M. Aldao, D.J.W. Aastuen, M. Vos, I.M. Vitomirov, G.D. Waddill, P.J. Benning, and J.H. Weaver, "Interface Formation with Ions and Neutral Atoms," Phys. Rev. B 42, 2878-2885 (1990).

M.B. Jost, T.J. Wagener, Y.-J. Hu, and J.H. Weaver, "Ga 3d Excitons at Surfaces and Interfaces," Phys. Rev. B 42, 2937-2940 (1990).

B.M. Trafas, D.M. Hill, R.L. Siefert, and J.H. Weaver, "Adsorption and Interaction of Sm on GaAs(110) Studied by Scanning Tunneling Microscopy," Phys. Rev. B Rapid Commun. 42, 3231-3234 (1990).

Y.-J. Hu, M.B. Jost, T.J. Wagener, and J.H. Weaver, "Long-Range Ordering of Sb Multilayers on GaAs(110): Evolution of Resonant Inverse Photoemission," Phys. Rev. B 42, 7050-7057 (1990).

Z. Liliental-Weber, E.R. Weber, J. Washburn, and J.H. Weaver, "Schottky Barrier Contacts on Defect-Free GaAs(110)," Appl. Phys. Lett. 56, 2507-2509 (1990).

C.M. Aldao, I.M. Vitomirov, G.D. Waddill, and J.H. Weaver, "Effects of Growth Temperature on Atom Distributions, Fermi Level Positions, and Valence-Band Offsets for the Ge/n-InP(110) Heterojunction," Phys. Rev. B 43, 13952-13956 (1991).

B.M. Trafas, Y.-N. Yang, R.L. Siefert, and J.H. Weaver, "Scanning Tunneling Microscopy of Ag Growth on GaAs(110) at 300 K: From Clusters to Crystallites," Phys. Rev. B 43, 14107-14114 (1991).

Y.-N. Yang, B.M. Trafas, R.L. Siefert, and J.H. Weaver, "GaAs(110) Terrace Width Distributions and Kink Formation," Phys. Rev. B 44, 3218-3221 (1991).

Y.-N. Yang, B.M. Trafas, R.L. Siefert, and J.H. Weaver, "Effect of Nonthermally-activated Hopping on Overlayer Morphology: An STM Study of Ti/GaAs(110)," Phys. Rev. B 44, 5720-5725 (1991).

Y.Z. Li, J.C. Patrin, Y. Chen, and J.H. Weaver, "Mg Ordering, Reaction, and Crystallite Formation on GaAs(110): Scanning Tunneling Microscopy and Photoemission Studies," Phys. Rev. B 44, 8843-8849 (1991).

Y.Z. Li, J.C. Patrin, M. Chander, and J.H. Weaver, "Rare Earth Growth Structures on GaAs(110): Ce, Sm, and Yb," Phys. Rev. B 44, 12903-12907 (1991).

T.R. Ohno, Y. Chen, S.E. Harvey, G.H. Kroll, J.H. Weaver, R.E. Haufler, and R.E. Smalley, "C60 Bonding and Energy Level Alignment on Metal and Semiconductor Surfaces," Phys. Rev. B 44, 13747-13755 (1991).

G.H. Kroll, T.R. Ohno, and J.H. Weaver, "Nondisruptive Oxide Overlayer Growth on GaAs(110)," Appl. Phys. Lett. 58, 2249-2251 (1991).

T. Komeda, F. Stepniak, and J.H. Weaver, "Schottky-Limit Barrier Heights for CO-Coated Metal Clusters on GaAs(110)," Appl. Phys. Lett. 58, 2809-2811 (1991).

Y.Z. Li, D.J.W. Aastuen, J.M. Seo, U.S. Ayyala, and J.H. Weaver, "Ti Overlayer Growth on Oxidized GaAs(110) vs. Ti Oxidation on Physisorbed O2 on GaAs(110) at 25 K," Surf. Sci. 250, 201-208 (1991).

Y.-J. Hu, M.B. Jost, and J.H. Weaver, "Resonant Inverse Photoemission of Sb Multilayers on GaAs(110) and InP(110) Surfaces," J. Vac. Sci. Technol. B 9, 255-263 (1991).

T. Komeda, S.G. Anderson, J.M. Seo, M.C. Schabel, and J.H. Weaver, "Sm/GaAs(110) Interface Formation: Surface Instabilities and Kinetic Constraints," J. Vac. Sci. Technol. A 9, 1964-1971 (1991).

M.B. Jost, Y.-J. Hu, D.M. Poirier, and J.H. Weaver, "Inverse Photoemission Study of Epitaxial Bi Overlayers on InP(110): Effect of Surface Relaxation," J. Vac. Sci. Technol. A 9, 1972-1976 (1991).

C.M. Aldao, I.M. Vitomirov, and J.H. Weaver, Properties of InP, Data Review Series No. 6, Inspec, "Structure of the Ag/InP Interface; Structure of the Au/In Interface; Barrier Heights at the Ag/InP Interface; Barrier Height at the Au/InP Interface," Sections 14.3-14.6, pp. 304-314 (1991).

J.C. Patrin, Y.Z. Li, and J.H. Weaver, "Cluster Growth of Al on Stepped and Unstepped GaAs(110) at 300 K: A Scanning Tunneling Microscopy Examination," Phys. Rev. B 45, 1756-1761 (1992).

Y.-N. Yang, Y.S. Luo, and J.H. Weaver, "Ag Crystallite Formation and Coalescence on Hydrogen-terminated GaAs(110)," Phys. Rev. B 45, 3606-3611 (1992).

J.C. Patrin, Y.Z. Li, M. Chander, and J.H. Weaver, "Orientational Ordering and Domain Wall Formation in Sb Overlayers on GaAs(110)," Phys. Rev. B Rapid Commun. 45, 3918-3921 (1992).

Y.-N. Yang, Y.S. Luo, and J.H. Weaver, "Anisotropic Kinetics in Overlayer Growth: An STM Study of Ge/GaAs(110)," Phys. Rev. B Rapid Commun. 45, 13803-13806 (1992).

J.C. Patrin, Y.Z. Li, M. Chander, and J.H. Weaver, "Sb and Bi on GaAs(110): Substrate Stabilized Overlayer Structures Studied with Scanning Tunneling Microscopy," Phys. Rev. B 46, 10221-10231 (1992).

Y.-N. Yang, Y.S. Luo, and J.H. Weaver, "An STM Study of Ge/GaAs(110) I: Initial Nucleation and Growth," Phys. Rev. B 46, 15387-15393 (1992).

Y.-N. Yang, Y.S. Luo, and J.H. Weaver, "An STM Study of Ge/GaAs(110) II: Coalescence and Layer-by-Layer Growth," Phys. Rev. B 46, 15394-15403 (1992).

Y.-N. Yang, Y.S. Luo, J.H. Weaver, L.T. Florez, and C.J. Palmstrøm, "The Effects of Annealing on the Surface Morphology of Decapped GaAs(001)," Appl. Phys. Lett. 61, 1930-1932 (1992).

C.M. Aldao, A. Palermo, and J.H. Weaver, "Calculated Photocurrents and Surface Barrier Heights," J. Vac. Sci. Technol. A 10, 493-496 (1992).

R. Duszak, C.J. Palmstrøm, L.T. Florez, Y.-N. Yang, and J.H. Weaver, "Dramatic Work Function Variations of MBE Grown GaAs(100) Surfaces," J. Vac. Sci. Technol. B 10, 1891-1897 (1992).

J.C. Patrin, Y.Z. Li, M. Chander, and J.H. Weaver, "Bi Thin Film Growth Structures Prepared at 30 K on GaAs(110) and InP(110)," J. Vac. Sci. Technol. A 11, 2073-2077 (1993).

Y.S. Luo, Y.-N. Yang, J.H. Weaver, L.T. Florez, and C.J. Palmstrøm, "Multi-orientational Growth of Al on GaAs(001) Studied with STM," Phys. Rev. B 49, 1893-1899 (1994).

F. Stepniak, D. Rioux, and J.H. Weaver, "Prelude to Etching: Surface Interaction of Chlorine on GaAs(110)," Phys. Rev B 50, 1929-1934 (1994).

X.-S. Wang, R.J. Pechman, and J.H. Weaver, "Interaction of 300-5000 eV Ions with GaAs(110)," Appl. Phys. Lett. 65, 2818-2820 (1994).

R.J. Pechman, X.-S. Wang, and J.H. Weaver, "Vacancy Kinetics on GaAs(110)," Phys. Rev. B 51, 10929-10936 (1995).

X.-S. Wang, R.J. Pechman, and J.H. Weaver, "Ion Sputtering of GaAs(110): From Individual Bombardment Events to Multilayer Removal," J. Vac. Sci. Technol. B 13, 2031-2040 (1995).

X.-S. Wang, J. Brake, R.J. Pechman, and J.H. Weaver, "Effect of Ion Sputtering on Ge Epitaxy on GaAs(110)," Appl. Phys. Lett. 68, 1660-1662 (1996).

J.H. Weaver, "Synchrotron Radiation Studies of Surfaces and Interfaces," Chapter 2 in Analytical Techniques for Thin Films, edited by K.N. Tu and R. Rosenberg (Academic Press, NY, 1988) pp. 15-63.

J.H. Weaver, Zhangda Lin, and F. Xu, "Surface Segregation at Evolving Metal/Semiconductor Interfaces," Chapter 10 in Surface Segregation Phenomena, edited by P.A. Dowben and A. Miller (CRC Press, Boca Raton, 1990) pp. 259-289.

J.H. Weaver, "The Formation and Properties of Metal-Semiconductor Interfaces," Chapter 8 in Electronic Materials: A New Era of Materials Science, Springer Series in Solid-State Sciences, Vol. 95, edited by J.R. Chelikowsky and A. Franciosi (Springer-Verlag, Berlin, 1991) pp. 135-214.

C.M. Aldao and J.H. Weaver "Atomic-Scale Chemistry of Metal-Semiconductor Interfaces," Chapter 7 in Contacts to Semiconductor Surfaces, edited by L.J. Brillson (Noyes Publication, New Jersey, 1993) pp. 465-555.

J.H. Weaver, G.D. Waddill, I.M. Vitomirov, and C.M. Aldao, "Cluster-Assembled Interfaces," in On Clusters and Clustering: From Atoms to Fractals, edited by Peter J. Reynolds (North Holland, 1993) pp. 179-192.

D.M. Poirier and J.H. Weaver, "Standard and Reference XPS Spectra for Cleaved Semiconductors: Group IV, III-V, and II-VI [Si(111), Ge(111), GaP(110), GaAs(110), InP(110), InAs(110), InSb(110), CdS, CdTe(110), diamond, graphite, and C60]," Special Issue of Surface Science Spectra (1993/1994) pp. 195-269.

J.H. Weaver, "Metal/Semiconductor Interfaces," Physics Today 39, 24-30 (1986), and cover photo. Translated into Japanese in Parity 1, 2-11 (1986) and Parity 3, 74-83 (1987).

Refereed Publications:

F. Xu, M. Vos, J.P. Sullivan, Lj. Atanasoska, S.G. Anderson, J.H. Weaver, and H. Cheng, "Band Gap Discontinuities for Ge/ZnSe(100) and Si/ZnSe(100): A Photoemission Study," Phys. Rev. B 38, 7382-7385 (1988).

F. Xu, M. Vos, J.H. Weaver, and H. Cheng, "Interface Dipoles, Surface Work Functions, and Schottky Barrier Formation at Au/ZnSe(100) Interfaces," Phys. Rev. B 38, 13418-13412 (1988).

M. Vos, F. Xu, J.H. Weaver, and H. Cheng, "Influence of Metal Interlayers on Schottky Barrier Formation for Au/ZnSe(100) and Al/ZnSe(100) Interfaces," Appl. Phys. Lett. 53, 1530-1532 (1988).

M. Vos, S.G. Anderson, and J.H. Weaver, "Inelastic Mean Free Paths for Electrons at Disordered Interfaces," Phys. Rev. B 39, 3274-3278 (1989).

S.G. Anderson, M. Vos, F. Xu, J.H. Weaver, and H. Cheng, "Schottky Barrier Formation and Atomic Intermixing at Au/ZnSe(100) and Co/ZnSe(100) Interfaces with Co and Au Interlayers," Phys. Rev. B 39, 5079-5090 (1989).

M. Vos, S.G. Anderson, J.H. Weaver, and H. Cheng, "Photoemission Studies of Interface Chemistry and Schottky Barriers for ZnSe(100) with Ti, Co, Cu, Pd, Ag, Au, Ce, and Al," Phys. Rev. B 39, 10744-10751 (1989).

B.M. Trafas, C.M. Aldao, C. Capasso, Yoram Shapira, F. Boscherini, I.M. Vitomirov, and J.H. Weaver, "Development of Rare Earth/Semiconductor Interfaces: Ce/InP(110), Sm/InSb(110), and Ce/CdTe(110)," Phys. Rev. B 40, 9811-9817 (1989).

M. Vos, C.M. Aldao, D.J.W. Aastuen, and J.H. Weaver, "Deposition of Ag Ions and Neutral Atoms on ZnSe(100): Influence of Interface Morphology on Schottky Barrier Formation," Phys. Rev. B 41, 991-994 (1990).

B.M. Trafas, C.M. Aldao, R.L. Siefert, M. Vos, F. Xu, and J.H. Weaver, "CdTe(110) Interface Formation with Reactive and Nonreactive Overlayers: Al, Ti, Pd, Ag, Au, In, and Ce Overlayers," J. Vac. Sci. Technol. A 8, 2055-2061 (1990).

B.M. Trafas, I.M. Vitomirov, C.M. Aldao, Y. Gao, F. Xu, J.H. Weaver, and D.L. Partin, "Au, Co, Cr, Pd, and In Overlayers on PbS(100) Surfaces: Adatom Interactions and Interface Formation," Phys. Rev. B 39, 3625-3273 (1989).

A. Franciosi, A. Wall, Y. Gao, J.H. Weaver, M.-H Tsai, J.D. Dow, R.V. Kasowski, R. Reifenberger, and F. Pool, "d States, Exchange Splitting, and Mn Electronic Configuration in Cd1-xMnxTe," Phys. Rev. B - Rapid Commun. 40, 12009-12012 (1989).

A. Wall, A. Franciosi, Y. Gao, J.H. Weaver, M.-H. Tsai, J.D. Dow, and R.V. Kasowski, "Inverse Photoemission and Resonant Photoemission Characterization of Semimagnetic Semiconductors," J. Vac. Sci. Technol. A 7, 656-662 (1989).