J.H. Weaver, V.L. Moruzzi, and F.A. Schmidt, "Experimental and Theoretical Band Structure Studies of Refractory Metal Silicides," Phys. Rev. B 23, 2916-2922 (1981).

A. Franciosi, D.J. Peterman, and J.H. Weaver, "Silicon Refractory-Metal Interfaces: Evidence of Room Temperature Intermixing for Si-Cr," J. Vac. Sci. Technol. 19, 657-660 (1981).

A. Franciosi, D.J. Peterman, J.H. Weaver, and V.L. Moruzzi, "Structural Morphology and Electronic Properties of the Si-Cr Interface," Phys. Rev. B 25, 4981- 4993 (1982).

A. Franciosi, J.H. Weaver, and F.A. Schmidt, "Electronic Structure of Nickel Silicides Ni2Si, NiSi, and NiSi2," Phys. Rev. B 26, 546-553 (1982).

A. Franciosi, J.H. Weaver, D.G. O'Neill, Y. Chabal, J.E. Rowe, J.M. Poate, O. Bisi, and C. Calandra, "Chemical Bonding at the Si-Metal Interface: Si-Ni and Si-Cr," J. Vac. Sci. Technol. 21, 624-627 (1982).

A. Franciosi and J.H. Weaver, "Bulk Silicides and Si-Metal Interface Reaction: Pd2Si," Phys. Rev. B 27, 3554-3561 (1983).

A. Franciosi and J.H. Weaver, "Si-Cr and Si-Pd Interface Reaction and Bulk Electronic Structure of Ti, V, Cr, Co, Ni, and Pd Silicides," Surface Sci. 132, 324-335 (1983).

A. Franciosi and J.H. Weaver, "Si-Metal Interface Reaction and Bulk Electronic Structure of Silicides," Physica B 117-118, 846 (1983).

A. Franciosi, J.H. Weaver, D.G. O'Neill, F.A. Schmidt, O. Bisi, and C. Calandra, "Electronic Structure of Cr Silicides and Si-Cr Interface Reactions," Phys. Rev. B 28, 7000-7008 (1983).

J.H. Weaver, A. Franciosi, and V.L. Moruzzi, "Bonding in Metal Disilicides CaSi2 through NiSi2: Experiment and Theory," Phys. Rev. B 29, 3293-3302 (1984).

M. Grioni, J.J. Joyce, S.A. Chambers, D.G. O'Neill, M. del Giudice, and J.H. Weaver, "Cluster Induced Reactions at a Metal-Semiconductor Interface: Ce/Si(111)," Phys. Rev. Lett. 53, 2331-2334 (1984).

M. Grioni, J.J. Joyce, M. del Giudice, D.G. O'Neill, and J.H. Weaver, "Modeling of a Heterogeneous Metal/Semiconductor Interface: Ce on Si(111)," Phys. Rev. B - Rapid Commun. 30, 7370-7373 (1984).

S.A. Chambers, S.B. Anderson, H.-W. Chen, and J.H. Weaver, "High-Temperature Nucleation and Silicide Formation at the Co/Si(111)-7x7 Interface - A Structural Study," Phys. Rev. B 34, 913-920 (1986).

S.A. Chambers, D.M. Hill, F. Xu, and J.H. Weaver, "Silicide Formation at the Ti/Si(111) Interface: Diffusion Parameters and Behavior at Elevated Temperatures," Phys. Rev. B 35, 634-640 (1987).

F. Boscherini, J.J. Joyce, M.W. Ruckman, and J.H. Weaver, "High Resolution Photoemission Study of Co/Si(111) Interface Evolution," Phys. Rev. B 35, 4216-4220 (1987).

M. del Giudice, J.J. Joyce, M.W. Ruckman, and J.H. Weaver, "Silicide Formation at the Ti/Si(111) Interface: Reaction and Schottky Barrier Formation," Phys. Rev. B 35, 6213- 6221 (1987).

A. Fujimori, M. Grioni, J.J. Joyce, and J.H. Weaver, "Chemical Bonding in Ordered Ce Overlayers on Si(111)," Phys. Rev. B 36, 1075-1079 (1987).

T. Komeda, Toshiyuki Hirano, G.D. Waddill, S.G. Anderson, J.P. Sullivan, and J.H. Weaver, "CoSi2(111), FeSi2(001), MoSi2(001) Surfaces and Interfaces with Ti," Phys. Rev. B 41, 8345-8352 (1990).

J.P. Sullivan, T. Hirano, T. Komeda, H.M. Meyer III, B.M. Trafas, G.D. Waddill, and J.H. Weaver, "Reaction and Stability of Metal/Silicide Interfaces: Ti/MoSi2(001)," Appl. Phys. Lett. 56, 671-673 (1990).

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