Book Chapters and Feature Articles:

J.H. Weaver and C.M. Aldao, "Spontaneous Etching of Si with Br, Cl, and I," in Morphological Organizations during Epitaxial Growth and Removal, edited by Z.Y. Zhang and M.G. Lagally (World Scientific Series on Directions of Condensed Matter Physics, 1999) pp. 453-484.

B.Y. Han and J.H. Weaver, "Spontaneous and Laser-enhanced Halogen Etching of GaAs," Journal of Physics: Condensed Matter 10, 7723-7742 (1998)

J.J. Boland and J.H. Weaver, "A Surface's Perspective of Etching," Physics Today 51, 34-40 (1998)

Refereed Publications:

B.M. Trafas, D.M. Hill, R.L. Siefert, and J.H. Weaver, "Adsorption and Interaction of Sm on GaAs(110) Studied by Scanning Tunneling Microscopy," Phys. Rev. B Rapid Commun. 42, 3231-3234 (1990).

Y.Z. Li and J.H. Weaver, "Direct Imaging of Fullerenes using Scanning Tunneling Microscopy," Research and Development Magazine, Vol. 33, December 1991, pp. 38-40.

Y.Z. Li, J.C. Patrin, M. Chander, J.H. Weaver, L.P.F. Chibante, and R.E. Smalley, "Ordered Overlayers of C60 on GaAs(110) Studied with Scanning Tunneling Microscopy," Science 252, 547-548 (1991).

Y.Z. Li, M. Chander, J.C. Patrin, J.H. Weaver, L.P.F. Chibante, and R.E. Smalley, "Order and Disorder in C60 and KxC60 Multilayers: Direct Imaging with Scanning Tunneling Microscopy," Science 253, 429-433 (1991).

B.M. Trafas, D.M. Hill, P.J. Benning, G.D. Waddill, Y.-N. Yang, R.L. Siefert, and J.H. Weaver, "Clustering and Reaction for Cr/GaAs(110): Scanning Tunneling Microscopy and Photoemission," Phys. Rev. B 43, 7174-7184 (1991).

B.M. Trafas, Y.-N. Yang, R.L. Siefert, and J.H. Weaver, "Scanning Tunneling Microscopy of Ag Growth on GaAs(110) at 300 K: From Clusters to Crystallites," Phys. Rev. B 43, 14107-14114 (1991).

Y.-N. Yang, B.M. Trafas, R.L. Siefert, and J.H. Weaver, "GaAs(110) Terrace Width Distributions and Kink Formation," Phys. Rev. B 44, 3218-3221 (1991).

Y.-N. Yang, B.M. Trafas, R.L. Siefert, and J.H. Weaver, "Effect of Nonthermally-activated Hopping on Overlayer Morphology: An STM Study of Ti/GaAs(110)," Phys. Rev. B 44, 5720-5725 (1991).

Y.Z. Li, J.C. Patrin, Y. Chen, and J.H. Weaver, "Mg Ordering, Reaction, and Crystallite Formation on GaAs(110): Scanning Tunneling Microscopy and Photoemission Studies," Phys. Rev. B 44, 8843-8849 (1991).

Y.Z. Li, J.C. Patrin, M. Chander, and J.H. Weaver, "Rare Earth Growth Structures on GaAs(110): Ce, Sm, and Yb," Phys. Rev. B 44, 12903-12907 (1991).

J.C. Patrin, Y.Z. Li, and J.H. Weaver, "Cluster Growth of Al on Stepped and Unstepped GaAs(110) at 300 K: A Scanning Tunneling Microscopy Examination," Phys. Rev. B 45, 1756-1761 (1992).

Y.-N. Yang, Y.S. Luo, and J.H. Weaver, "Ag Crystallite Formation and Coalescence on Hydrogen-terminated GaAs(110)," Phys. Rev. B 45, 3606-3611 (1992).

J.C. Patrin, Y.Z. Li, M. Chander, and J.H. Weaver, "Orientational Ordering and Domain Wall Formation in Sb Overlayers on GaAs(110)," Phys. Rev. B Rapid Commun. 45, 3918-3921 (1992).

Y.-N. Yang, Y.S. Luo, and J.H. Weaver, "Anisotropic Kinetics in Overlayer Growth: An STM Study of Ge/GaAs(110)," Phys. Rev. B Rapid Commun. 45, 13803-13806 (1992).

Y.Z. Li, M. Chander, J.C. Patrin, and J.H. Weaver, "Adsorption of Individual C60 Molecules on Si(111)," Phys. Rev. B Rapid Commun. 45, 13837-13840 (1992).

Y.S. Luo, Y.-N. Yang, and J.H. Weaver, "Mechanisms for Adatom-Induced Disruption of Bi2Sr2CaCu2O8(001): STM Studies of Ag, Au, and Cr Growth," Phys. Rev. B 46, 1114-1121 (1992).

J.C. Patrin, Y.Z. Li, M. Chander, and J.H. Weaver, "Sb and Bi on GaAs(110): Substrate Stabilized Overlayer Structures Studied with Scanning Tunneling Microscopy," Phys. Rev. B 46, 10221-10231 (1992).

Y.Z. Li, J.C. Patrin, M. Chander, J.H. Weaver, L.P.F. Chibante, and R.E. Smalley, "Real-Space Imaging of CaxC60 Using Scanning Tunneling Microscopy," Phys. Rev. B Rapid Commun. 46, 12914-12917 (1992).

Y.-N. Yang, Y.S. Luo, and J.H. Weaver, "An STM Study of Ge/GaAs(110) I: Initial Nucleation and Growth," Phys. Rev. B 46, 15387-15393 (1992).

Y.-N. Yang, Y.S. Luo, and J.H. Weaver, "An STM Study of Ge/GaAs(110) II: Coalescence and Layer-by-Layer Growth," Phys. Rev. B 46, 15394-15403 (1992).

Y.-N. Yang, Y.S. Luo, J.H. Weaver, L.T. Florez, and C.J. Palmstrøm, "The Effects of Annealing on the Surface Morphology of Decapped GaAs(001)," Appl. Phys. Lett. 61, 1930-1932 (1992).

R. Duszak, C.J. Palmstrøm, L.T. Florez, Y.-N. Yang, and J.H. Weaver, "Dramatic Work Function Variations of MBE Grown GaAs(100) Surfaces," J. Vac. Sci. Technol. B 10, 1891-1897 (1992).

M. Chander, Y.Z. Li, and J.H. Weaver, "Patterning of Si(100): Spontaneous Etching with Br2," Phys. Rev. Lett. 71, 4154-4157 (1993).

Y.Z. Li, J.C. Patrin, M. Chander, J.H. Weaver, and K. Kikuchi, Y. Achiba, "Overlayer Growth and Molecular Structures of C84 and Other Large Fullerenes: An STM Study," Phys. Rev. B 47, 10867-10872 (1993).

M. Chander, Y.Z. Li, J.C. Patrin, and J.H. Weaver, "Layer-by-Layer Etching of Si(100)-2x1 with Br2: An STM Study," Phys. Rev. B Rapid Commun. 47, 13035-13038 (1993).

M. Chander, Y.Z. Li, J.C. Patrin, and J.H. Weaver, "Si(001)-2x1 Surface Defects and Dissociative and Nondissociative Adsorption of H2O : An STM Study," Phys. Rev. B 48, 2493-2499 (1993).

J.C. Patrin and J.H. Weaver, "Br2 and Cl2 Adsorption and Etching of GaAs(110) Studied by Scanning Tunneling Microscopy," Phys. Rev. B 48, 17913-17921 (1993).

J.C. Patrin, Y.Z. Li, M. Chander, and J.H. Weaver, "Atomic Layer Etching of GaAs(110) with Br2 Studied by STM," Appl. Phys. Lett. 62, 1277-1279 (1993).

Y.B. Zhao, D.M. Poirier, and J.H. Weaver, "KxC60 Structural Evolution: Scanning Tunneling Microscopy and Low Energy Electron Diffraction," J. Phys. Chem. Solids 54, 1684-1692 (1993).

J.C. Patrin, Y.Z. Li, M. Chander, and J.H. Weaver, "Bi Thin Film Growth Structures Prepared at 30 K on GaAs(110) and InP(110)," J. Vac. Sci. Technol. A 11, 2073-2077 (1993).

Y.S. Luo, Y.-N. Yang, J.H. Weaver, L.T. Florez, and C.J. Palmstrøm, "Multi-Orientational Growth of Al on GaAs(001) Studied with STM," Phys. Rev. B 49, 1893-1899 (1994).

D. Rioux, M. Chander, Y.Z. Li, and J.H. Weaver, "Bromine Interaction with Si(100)- 2x1: Chemisorption and the Initial Stages of Etching," Phys. Rev. B 49, 11071-11079 (1994).

D. Rioux, R.J. Pechman, M. Chander, and J.H. Weaver, "Temperature Dependent Surface Morphologies for Br-etched Si(100)-2x1," Phys. Rev. B 50, 4430-4438 (1994).

Y.B. Zhao, D.M. Poirier, R.J. Pechman, and J.H. Weaver, "Electron Stimulated Polymerization of Solid C60," Appl. Phys. Lett. 64, 577-579 (1994).

X.-S. Wang, R.J. Pechman, and J.H. Weaver, "Interaction of 300-5000 eV Ions with GaAs(110)," Appl. Phys. Lett. 65, 2818-2820 (1994).

M. Chander, D.A. Goetsch, C.M. Aldao, and J.H. Weaver, "Determination of Dynamic Parameters Controlling Atomic Scale Etching of Si(100)-2x1 by Chlorine," Phys. Rev. Lett. 74, 2014-2017 (1995).

R.J. Pechman, X.-S. Wang, and J.H. Weaver, "Vacancy Kinetics on GaAs(110)," Phys. Rev. B 51, 10929-10936 (1995).

D. Rioux, F. Stepniak, R.J. Pechman, and J.H. Weaver, "Chemisorption and Thermally-activated Etching of Si(100)-2x1 by Iodine," Phys. Rev. B 51, 10981-10988 (1995).

M. Chander, D.A. Goetsch, C.M. Aldao, and J.H. Weaver, "Etching of Si(100)-2x1 with Chlorine: Reaction Pathways, Energy Anisotropies, and Atomic Scale Phenomena," Phys. Rev. B 52, 8288-8294 (1995).

X.-S. Wang, R.J. Pechman, and J.H. Weaver, "Ion Sputtering of GaAs(110): From Individual Bombardment Events to Multilayer Removal," J. Vac. Sci. Technol. B 13, 2031-2040 (1995).

R.J. Pechman, X.-S. Wang, and J.H. Weaver, "Interactions of Br with Si(111)-7x7: Chemisorption, Step Retreat, and Terrace Etching," Phys. Rev. B 52, 11412-11423 (1995).

R.J. Pechman, T. Moriwaki, J.H. Weaver, and G.S. Khoo, "Formation of Br-terminated Si6 Rings during Etching of Si(111)7x7," Surf. Sci. Lett. 341, L1085-1090 (1995).

X.-S. Wang, J. Brake, R.J. Pechman, and J.H. Weaver, "Effect of Ion Sputtering on Ge Epitaxy on GaAs(110)," Appl. Phys. Lett. 68, 1660-1662 (1996).

J. Brake, X.-S. Wang, R.J. Pechman, and J.H. Weaver, "Enhanced Epitaxial Growth on Substrates Modified by Ion Sputtering: Ge on GaAs(110)," Phys. Rev. B 53, 11170-11175 (1996)

Y. Gong, D.W. Owens, and J.H. Weaver, "Etching of Double-height-stepped Si(100)-2x1: A Study of Steps and Their Interactions," Phys. Rev. B Rapid Communications 53, R16144-R16147 (1996).

F.J. Williams, C.M. Aldao, and J.H. Weaver, "Surface Morphologies for Br-etched Si(100)-2x1: Kinetics of Pit Growth and Step Retreat," J. Vac. Sci. Technol. B 14, 2519-2523 (1996).

X.-S. Wang, R.J. Pechman, and J.H. Weaver, "Trends in Surface Roughening: Analysis of Ion-sputtered GaAs(110)," Surf. Sci. 364, 511-518 (1996).

C.Y. Cha and J.H. Weaver, "Layer-by-Layer Removal of GaAs(110) by Bromine," J. Vac. Sci. Technol. B 14, 3559-3562 (1996).

C.M. Aldao and J.H. Weaver, "Scanning Tunneling Microscopy Observations and Analysis of Thermal Etching of Si(100) with Br and Cl," Japanese J. Appl. Phys. 36, 2456-2459 (1997).

C.Y. Cha, J. Brake, B.Y. Han, D.W. Owens, and J.H. Weaver, "Surface Morphologies Associated with Thermal Deposition: Scanning Tunneling Microscopy Studies of Br-GaAs(110)," J. Vac. Sci. Technol. B 15, 605-609 (1997).

J. Brake, C.Y. Cha, B.Y. Han, D.W. Owens, and J.H. Weaver, "Coverage-dependent Etching Pathways for Br-GaAs(110)," J. Vac. Sci. Technol. B 15, 670-674 (1997).

F.J. Williams, C.M. Aldao, Y. Gong, and J.H. Weaver, "Why Si(100) Steps are Rougher after Etching," Phys. Rev. B B 55, 13829-13834 (1997).

C.Y. Cha, B.Y.Han, and J.H. Weaver, "Pulsed-laser-induced Etching of Br-GaAs(110) using 2.3 eV Photons," Surf. Sci. Lett. 381, L636-L643 (1997).

B.Y. Han, C.Y. Cha, and J.H. Weaver, "Etch Pit Development and Growth on GaAs(110)," Phys. Rev. B 56, 4966-4970 (1997).

Lin Huang, S. Jay Chey, and J.H. Weaver, "Buffer-Layer-Assisted Growth of Nanocrystals: Ag-Xe-Si(111)," Phys. Rev. Lett. 80, 4095-4098 (1998).

B.Y. Han, C.Y. Cha, and J.H. Weaver, "Terrace patterning of GaAs(110) with Halogenation and Pulsed-laser Irradiation," J. Vac. Sci. Technol. A 16, 490-493 (1998).

B.Y. Han and J.H. Weaver, "Spontaneous and Laser-enhanced Halogen Etching of GaAs," Special issue of Journal of Physics: Condensed Matter, featuring Surface Science and Interfaces (in press).

S. J. Chey, Lin Huang, and J.H. Weaver, "Manipulation and Writing with Ag Nanocrystals on Si(111)-7x7," Appl. Phys. Lett. 21, 2698-2700 (1998).

S.J. Chey, Y. Gong, and J.H. Weaver, "Surface Morphologies of Br-etched Ge/Si(001)," Surf. Sci. 409, 421-427 (1998).

J.L. Iguain, H.O. Martin, C.M. Aldao, Y. Gong, S.J. Chey, and J.H. Weaver, "Dimer Chain Patterns during Submonolayer Growth of Silicon on Si(100)," J. Vac. Sci. Technol. A 16, 3460-3463 (1998).

L. Huang, S.J. Chey, and J.H. Weaver, "Metastable Structures and Critical Thicknesses: Ag on Si(111)-7x7," Surf. Sci. Lett. 416, L1101-L1106 (1998).

B.Y. Han and J.H. Weaver, "Laser Interaction with Br-GaAs(110): Etching and Atomic Desorption," Phys. Rev. B 58, 10981-10990 (1998).

K. Nakayama and J.H. Weaver, "Vacancy-assisted Halogen Etching Si(100)-2x1," Phys. Rev. Lett. 82, 568-571 (1999).

S. Jay Chey, L. Huang, and J.H. Weaver, "Interface Bonding and Manipulation of Ag and Cu Nanocrystals on Si(111)-(7x7)-based Surfaces" Phys. Rev. B (in press).

S.J. Chey, L. Huang, and J.H. Weaver, "Self-Assembly of Multilayer Arrays from Ag Nanoclusters Delivered to Ag(111) by Soft Landing," Surf. Sci. Lett. 419, L100-L106 (1999).

K. Nakayama and J.H. Weaver, "Electron-Stimulated Modification of Si Surfaces," Phys. Rev. Lett. 82, 980-983 (1999).

K. Nakayama, C.M. Aldao, and J.H. Weaver, "Halogen Etching of Si(100)-2x1: Dependence on Surface Concentration and Vacancy Creation," Phys. Rev. B 59, 15893-15901 (1999).

K. Nakayama and J.H. Weaver, "Si(100)-2x1 Etching with Fluorine: Planar Removal vs. Three Dimensional Pitting," Phys. Rev. Lett. 83, 3210-3213 (1999).

B.Y. Han, K.S. Nakayama, and J.H. Weaver, "Electron and Photon-stimulated Modification of GaAs(110), Si(100), and Si(111)," Phys.Rev. B 60, 13826-13858 (1999).

M.M.R. Evans, B.Y. Han, and J.H. Weaver, "Ag Films on GaAs(110): Dewetting and Void Growth," Surf. Sci. 465, 90-96 (2000).

K.S. Nakayama, T. Sakurai, and J.H. Weaver, "Electrochemical Fluorine Source for Ultrahigh Vacuum Dosing," J. Vac. Sci. Technol. A 18, 2606-2607 (2000).

K.S. Nakayama, B.Y. Han, and J.H. Weaver, "Electron- and Photon-stimulated Modification of Semiconductor Surfaces," Butsuri (The Physical Society of Japan) 55, 281-285 (2000). In Japanese.

C.M. Aldao and J.H. Weaver, "Halogen Etching of Si via Atomic-scale Processes," review article, Progress in Surface Science 68, 189-230 (2001).

K.S. Nakayama, E. Graugnard, and J.H. Weaver, "Surface Modification without Desorption: Recycling of Cl on Si(100)-2x1," Phys. Rev. Lett. 88, 125508 (2002). See also C&E News 80, 38 (March 25, 2002).

C.L. Haley and J.H. Weaver, "Buffer-Layer-Assisted Growth via Two-Dimensional Diffusion-Limited Cluster Aggregation," Surf. Sci. 518, 243-250 (2002).

K.S. Nakayama, E. Graugnard, and J.H. Weaver, "Tunneling Electron Induced Bromine Hopping on Si(100)-2x1," Phys. Rev. Lett. (in press).

V.N. Antonov and J.H. Weaver, "CO-induced Morphology Modification in buffer-Layer-Assisted Growth of Pd Nanostructures," Surf. Sci. (in press).

G.J. Xu, E. Graugnard, V. Petrova, K.S. Nakayama, and J.H. Weaver, "Dynamics of Si(100)-2x1 Surface Modification with Cl," Phys. Rev. B (submitted 9/17/02).

G.J. Xu, K.S. Nakayama, B.R. Trenhaile, C.M. Aldao, and J.H. Weaver, "Equilibrium Morphologies for Cl-roughened Si(100) at 700-750 K: Dependence on Cl Concentration," Phys. Rev. B (submitted 11/15/02).

E. Graugnard, K.S. Nakayama, and J.H. Weaver, "Growth of Atom Vacancy Lines and Their Influence on the Roughening for Br-Si (100)," Phys. Rev. B.

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